Title:
SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING DEVICE, AND PROGRAM
Document Type and Number:
WIPO Patent Application WO/2022/180793
Kind Code:
A1
Abstract:
The present invention comprises (a) a step for supplying a film-forming gas into a processing container accommodating a substrate, and forming a film on the substrate, (b) a step for supplying a fluorine-containing gas into the processing container not accommodating the substrate, and removing a film-including deposit that has adhered to the inside of the processing container, (c) a step for supplying a precoat gas into the processing container not accommodating the substrate after the deposit removal, and forming a precoat film inside the processing container, and (d) a step for supplying a film-forming gas into the processing container accommodating the substrate after the precoat film formation, and forming a film on the substrate, wherein at (c), the film thickness distribution of the precoat film is adjusted according to the distribution of the residual fluorine concentration inside the processing container.
Inventors:
KOSHI YASUNOBU (JP)
HARADA KAZUHIRO (JP)
URANO YUJI (JP)
NOHARA SHINGO (JP)
HARADA KAZUHIRO (JP)
URANO YUJI (JP)
NOHARA SHINGO (JP)
Application Number:
PCT/JP2021/007373
Publication Date:
September 01, 2022
Filing Date:
February 26, 2021
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H01L21/31
Foreign References:
| JP2004064018A | 2004-02-26 | |||
| JP2018157095A | 2018-10-04 | |||
| JP2021027227A | 2021-02-22 | |||
| JP2012019194A | 2012-01-26 |
Attorney, Agent or Firm:
FUKUOKA Masahiro et al. (JP)
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