Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/108789
Kind Code:
A1
Abstract:
The present application provides a semiconductor device and a manufacturing method therefor. The method comprises: providing a substrate, wherein the substrate is provided with a first source-drain layer, a channel layer and a second source-drain layer that are sequentially stacked, and the periphery of the channel layer is provided with a gate dielectric layer and a gate structure which surround the channel layer in the horizontal direction; forming a spacer layer on the outer side wall of the gate structure; etching the gate structure, so as to reduce the thickness of the gate structure; forming a sacrificial structure covering the gate structure, and a covering layer covering the second source-drain layer, the sacrificial structure and the spacer layer, so that the sacrificial structure is located on the periphery of the second source-drain layer and located on the inner side of the spacer layer; then etching the covering layer to obtain a first contact hole passing through the sacrificial structure, and removing the sacrificial structure at the bottom of the first contact hole to form a gap below the first contact hole; and forming first contact structures in the first contact hole and the gap, thereby realizing self-alignment of the bottoms of the first contact structures and the gate structure, and improving the reliability of a device.
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Inventors:
LIU ZIYI (CN)
ZHU HUILONG (CN)
ZHU HUILONG (CN)
Application Number:
PCT/CN2021/141028
Publication Date:
June 22, 2023
Filing Date:
December 24, 2021
Export Citation:
Assignee:
BEIJING SUPERSTRING ACADEMY OF MEMORY TECH (CN)
INST OF MICROELECTRONICS CAS (CN)
INST OF MICROELECTRONICS CAS (CN)
International Classes:
H01L29/423; H01L21/336; H01L29/78
Foreign References:
CN109768087A | 2019-05-17 | |||
US20160149054A1 | 2016-05-26 | |||
CN113053822A | 2021-06-29 | |||
CN113327978A | 2021-08-31 | |||
CN108110059A | 2018-06-01 | |||
CN109449206A | 2019-03-08 |
Attorney, Agent or Firm:
UNITALEN ATTORNEYS AT LAW (CN)
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