Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/134308
Kind Code:
A1
Abstract:
The embodiments of the present disclosure provide a semiconductor device and a manufacturing method therefor. The semiconductor device comprises: a substrate, and a capacitor arranged on the substrate, wherein the capacitor at least comprises an upper electrode layer, and the upper electrode layer extends in a plurality of planes and defines a non-closed accommodating cavity; an upper electrode plate which is in contact connection with the upper electrode layer, wherein the upper electrode plate comprises a silicon germanium layer and a first conductive layer covering the silicon germanium layer, the silicon germanium layer fills the accommodating cavity, and the electrical conductivity of the first conductive layer is greater than the electrical conductivity of the silicon germanium layer; and a contact plug which is in contact connection with the upper electrode plate.
Inventors:
XU YACHAO (CN)
WU GONGYI (CN)
WU GONGYI (CN)
Application Number:
PCT/CN2022/133774
Publication Date:
July 20, 2023
Filing Date:
November 23, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H10B12/00; H01L21/768
Foreign References:
| CN114400287A | 2022-04-26 | |||
| CN113161355A | 2021-07-23 | |||
| CN108155152A | 2018-06-12 | |||
| CN113345835A | 2021-09-03 | |||
| CN111326515A | 2020-06-23 | |||
| CN110620150A | 2019-12-27 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
Download PDF: