Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/216366
Kind Code:
A1
Abstract:
Provided are a semiconductor device and a manufacturing method therefor. The manufacturing method comprises: sequentially forming a first oxide layer, a storage layer, a second oxide layer, a control gate layer and a hard mask layer on a substrate; etching the hard mask layer, the control gate layer, the second oxide layer, the storage layer and the first oxide layer to form a gate stack; respectively forming a first gate spacer and a second gate spacer on two sides of the gate stack; forming a first select gate on the side of the first gate spacer opposite to the gate stack, and forming a second select gate on the side of the second gate spacer opposite to the gate stack; etching the gate stack to form a first opening; forming a source region in the portion of the substrate located below the first opening; and forming a first drain region in the substrate on the side of the first select gate opposite to the first opening, and forming a second drain region in the substrate on the side of the second select gate opposite to the first opening.
Inventors:
WANG CHUNMING (CN)
WANG SHAODI (CN)
WANG SHAODI (CN)
Application Number:
PCT/CN2022/099887
Publication Date:
November 16, 2023
Filing Date:
June 20, 2022
Export Citation:
Assignee:
BEIJING ZHICUN WITMEM TECH CO LTD (CN)
International Classes:
H01L21/28; H01L29/423
Foreign References:
| KR20100122259A | 2010-11-22 | |||
| US20150048439A1 | 2015-02-19 | |||
| CN101882622A | 2010-11-10 | |||
| US20040152268A1 | 2004-08-05 | |||
| US9343466B1 | 2016-05-17 |
Attorney, Agent or Firm:
BEIJING HAN KUN LAW OFFICES (CN)
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