SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

WIPO Patent Application WO/2023/216367

A1

Provided are a semiconductor device and a manufacturing method therefor. The semiconductor device comprises: a substrate, which comprises a memory cell region, wherein the memory cell region comprises a first drain electrode region, a first trench region and a source electrode region, the first trench region extending between the first drain electrode region and the source electrode region; a first floating gate electrode, which is located above a first portion of the first trench region; a first erasure gate electrode, which is located above the first floating gate electrode; a first selection gate electrode, which is located above a second portion of the first trench region, and is located at the side of the first floating gate electrode that is away from the source electrode region; a first programming channel, which extends from the first drain electrode region to an edge portion of the first floating gate electrode that faces the first selection gate electrode; a second programming channel, which extends from the first drain electrode region to the source electrode region; and a first erasure channel, which extends, to the first erasure gate electrode, from an edge portion of the first floating gate electrode that faces the first erasure gate electrode.

WANG CHUNMING (CN)
WANG SHAODI (CN)

PCT/CN2022/099904

November 16, 2023

June 20, 2022

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BEIJING ZHICUN WITMEM TECH CO LTD (CN)

H01L27/00

CN104916641A	2015-09-16
CN1770478A	2006-05-10
CN104541368A	2015-04-22
CN110875324A	2020-03-10
CN1540762A	2004-10-27
CN1674289A	2005-09-28
CN102005458A	2011-04-06

BEIJING HAN KUN LAW OFFICES (CN)

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