Title:
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2023/243073
Kind Code:
A1
Abstract:
In a transistor (1) according to the present disclosure, the quantity of boron ions (B+) that are implanted in a gate insulating film (5) is greater than the quantity of boron ions (B+) that are implanted in a first region (4b) and a second region (4c) of an oxide semiconductor layer (4). Consequently, a transistor (1) can be achieved in which low resistances of the first region (4b) and the second region (4c) of the oxide semiconductor layer (4) are maintained.
Inventors:
KANZAKI YOHSUKE
SAITOH TAKAO
FUJIWARA MASAKI
MIWA MASAHIKO
YAMANAKA MASAKI
SUN YI
KAMATANI KOUHEI
SAITOH TAKAO
FUJIWARA MASAKI
MIWA MASAHIKO
YAMANAKA MASAKI
SUN YI
KAMATANI KOUHEI
Application Number:
PCT/JP2022/024279
Publication Date:
December 21, 2023
Filing Date:
June 17, 2022
Export Citation:
Assignee:
SHARP DISPLAY TECHNOLOGY CORP (JP)
International Classes:
H01L29/786
Domestic Patent References:
| WO2020089726A1 | 2020-05-07 | |||
| WO2016175086A1 | 2016-11-03 |
Foreign References:
| JP2014199896A | 2014-10-23 | |||
| JP2002353239A | 2002-12-06 | |||
| JP2020150173A | 2020-09-17 | |||
| JP2013211543A | 2013-10-10 |
Attorney, Agent or Firm:
HARAKENZO WORLD PATENT & TRADEMARK (JP)
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