Title:
SEMICONDUCTOR DEVICE MEASUREMENT METHOD
Document Type and Number:
WIPO Patent Application WO/2021/218941
Kind Code:
A1
Abstract:
The application relates to a semiconductor device measurement method, which can reduce differences in measurement when measuring the critical dimensions of a semiconductor device. The semiconductor device measurement method uses an elliptical polarization interference spectrometer to measure the critical dimensions of a semiconductor device, and comprises the following steps: according to surface morphology features of a standard component of a semiconductor device, acquiring at least two smallest repeating units of the surface of the semiconductor device; measuring the critical dimensions of the at least two smallest repeating units, and acquiring critical dimension data of the at least two smallest repeating units; according to the critical dimension data of the at least two smallest repeating units, constructing, within the elliptical polarization interference spectrometer, a measurement model about the semiconductor device; and according to the measurement model, measuring the critical dimensions of the semiconductor device.
Inventors:
LI HONGXIANG (CN)
Application Number:
PCT/CN2021/090088
Publication Date:
November 04, 2021
Filing Date:
April 27, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
G01B11/22; H01L21/66
Foreign References:
CN107193190A | 2017-09-22 | |||
CN104810352A | 2015-07-29 | |||
CN105444666A | 2016-03-30 | |||
CN101241303A | 2008-08-13 | |||
US20190198404A1 | 2019-06-27 | |||
US20180211891A1 | 2018-07-26 |
Attorney, Agent or Firm:
SHANGHAI WINSUN INTELLECTUAL PROPERTY AGENCY (CN)
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