Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2011/007470
Kind Code:
A1
Abstract:
Disclosed is a method for manufacturing a semiconductor device, which is provided with: a step of forming, on a first active region (10a) formed on a substrate (10), a first gate insulating film (17a) containing a high dielectric material, and a first gate electrode (18a) containing a metal material, and forming, on a second active region (10b) formed on the substrate (10), a second gate insulating film (17b) containing a high dielectric material, and a second gate electrode (18b) containing a metal material; a step of introducing negative fixed charges into the end portion of the first gate insulating film (17a) and the end portion of the second gate insulating film (17b); and a step of removing the end portion of the first gate insulating film (17a).
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Inventors:
FUJITA TOMOHIRO
HIRASE JUNJI
SATO YOSHIHIRO
HIRASE JUNJI
SATO YOSHIHIRO
Application Number:
PCT/JP2010/001143
Publication Date:
January 20, 2011
Filing Date:
February 22, 2010
Export Citation:
Assignee:
PANASONIC CORP (JP)
FUJITA TOMOHIRO
HIRASE JUNJI
SATO YOSHIHIRO
FUJITA TOMOHIRO
HIRASE JUNJI
SATO YOSHIHIRO
International Classes:
H01L21/8238; H01L27/092; H01L29/78
Domestic Patent References:
| WO2005013374A1 | 2005-02-10 |
Foreign References:
| JP2004087695A | 2004-03-18 | |||
| JP2005333164A | 2005-12-02 | |||
| JP2008211182A | 2008-09-11 | |||
| JP2008305950A | 2008-12-18 | |||
| JP2000174135A | 2000-06-23 |
Attorney, Agent or Firm:
MAEDA, Hiroshi et al. (JP)
Hiroshi Maeda (JP)
Hiroshi Maeda (JP)
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