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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2021/161635
Kind Code:
A1
Abstract:
In the present invention, suitably manufactured is a semiconductor device that includes, in an electronic circuit, both an element that uses polysilicon and an element that uses an oxide semiconductor. A first semiconductor region made of a polysilicon film 54 is formed on an insulating substrate 50, and insulating films 55, 58 are layered on the first semiconductor region. Contact holes 63 are formed in the insulating films 55, 58, after which an oxide semiconductor film 82 is formed on the surface of the insulating film 58b. An etching mask 84 is formed on a surface of the oxide semiconductor film 82. The oxide semiconductor film 82 is etched using the etching mask 84, the oxide semiconductor film 82 is removed from the contact holes 63, and a second semiconductor region made of an oxide semiconductor film 60 is formed. Contact electrodes 62s, 62d which electrically connect to the first semiconductor region are formed by embedding an electroconductive material in the contact holes 63.

Inventors:
YAMAGUCHI YOHEI (JP)
Application Number:
PCT/JP2020/045475
Publication Date:
August 19, 2021
Filing Date:
December 07, 2020
Export Citation:
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Assignee:
JAPAN DISPLAY INC (JP)
International Classes:
H01L21/336; H01L21/306; H01L21/308; H01L21/8234; H01L27/088; H01L29/786
Domestic Patent References:
WO2018180968A12018-10-04
Foreign References:
US20170084636A12017-03-23
JP2016527719A2016-09-08
JP2018195747A2018-12-06
JP2011243959A2011-12-01
Attorney, Agent or Firm:
HARUKA PATENT & TRADEMARK ATTORNEYS (JP)
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