Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2021/218044
Kind Code:
A1
Abstract:
A semiconductor device, which comprises a first nitride semiconductor layer, a second nitride semiconductor layer, a source electrode, a drain electrode, a gate structure, a plurality of first p-type doped nitride semiconductor islands, and a plurality of second p-type doped nitride semiconductor islands. The second nitride semiconductor layer is arranged on the first nitride semiconductor layer. The source electrode and the drain electrode are arranged on the second nitride semiconductor layer, wherein when the drain electrode is viewed in a direction perpendicular to the second nitride semiconductor layer, the drain electrode longitudinally extends in an extension direction. The gate structure is located between the source electrode and the drain electrode, The first p-type doped nitride semiconductor islands are arranged on the second nitride semiconductor layer and are arranged adjacent to the drain electrode in the extension direction, wherein when viewed in a direction perpendicular to the second nitride semiconductor layer, the drain electrode and the first p-type doped nitride semiconductor islands overlap with one another. The second p-type doped nitride semiconductor islands are arranged between the gate structure and the second nitride semiconductor layer.
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Inventors:
HAO RONGHUI (CN)
WONG KING YUEN (CN)
WONG KING YUEN (CN)
Application Number:
PCT/CN2020/120972
Publication Date:
November 04, 2021
Filing Date:
October 14, 2020
Export Citation:
Assignee:
INNOSCIENCE SUZHOU SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L21/335; H01L29/778
Foreign References:
| CN207664048U | 2018-07-27 | |||
| US20200105917A1 | 2020-04-02 | |||
| CN111527610A | 2020-08-11 | |||
| US10002956B1 | 2018-06-19 | |||
| CN105322008A | 2016-02-10 |
Attorney, Agent or Firm:
IDEA INTELLECTUAL (SHENZHEN) IP AGENCY (CN)
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