Title:
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC APPARATUS
Document Type and Number:
WIPO Patent Application WO/2024/004431
Kind Code:
A1
Abstract:
The present invention improves yield. This semiconductor device comprises: a volumetric-shaped semiconductor portion that has an upper surface portion, a lower surface portion, and a side surface portion; an underlayer film which is provided on the lower surface portion side of the semiconductor portion; and a field-effect transistor having a gate electrode which is disposed with a gate insulation film interposed between the semiconductor portion and the gate electrode. The underlayer film includes a base portion which is spaced apart from the semiconductor portion, and a protrusion portion that protrudes from the base portion on the lower surface portion side of the semiconductor portion and to contact the lower surface portion. The gate electrode is provided over and across the upper surface portion and the side surface portion of the semiconductor portion, and also extends around to the lower surface portion side of the semiconductor portion so as to sandwich the protrusion portion.
Inventors:
MOCHIZUKI TAKEYA (JP)
Application Number:
PCT/JP2023/018852
Publication Date:
January 04, 2024
Filing Date:
May 22, 2023
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L29/78; H01L21/336; H01L21/8234; H01L27/06; H01L27/146; H01L29/786; H04N25/70
Domestic Patent References:
| WO2020121725A1 | 2020-06-18 |
Foreign References:
| JP2003069036A | 2003-03-07 | |||
| JP2012089841A | 2012-05-10 |
Attorney, Agent or Firm:
TANAKA Hidetetsu et al. (JP)
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