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Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
WIPO Patent Application WO/2024/040600
Kind Code:
A1
Abstract:
A semiconductor device includes a first and a second nitride-based semiconductor layers, a drain, a source electrodes, a gate electrode, a plurality of field plates, a conductive layer, and at least one contact via. The field plates are disposed over the second nitride-based semiconductor layer and located between the gate and drain electrodes. The gate electrode is free from coverage of the field plates. The conductive layer is disposed over the field plates. The at least one contact via connect one of the field plates to the conductive layer, such that the one of the field plates and the contact via have substantially the same voltage level.

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Inventors:
CHEN PO-WEI (CN)
Application Number:
PCT/CN2022/115252
Publication Date:
February 29, 2024
Filing Date:
August 26, 2022
Export Citation:
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Assignee:
INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD (CN)
International Classes:
H01L29/40; H01L21/335; H01L27/06; H01L29/20; H01L29/778
Foreign References:
CN114175269A2022-03-11
CN110444599A2019-11-12
CN111739934A2020-10-02
US20170263716A12017-09-14
CN114080691A2022-02-22
Attorney, Agent or Firm:
BEIJING BESTIPR INTELLECTUAL PROPERTY LAW CORPORATION (CN)
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