Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF
Document Type and Number:
WIPO Patent Application WO/2022/217413
Kind Code:
A1
Abstract:
A semiconductor device includes a nucleation layer, a buffer layer, a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, S/D electrodes, and a gate electrode. The nucleation layer includes a composition that includes a first element. The buffer layer includes a III-V compound which includes the first element. The buffer layer is disposed on and forms an interface with the nucleation layer. The buffer layer has a concentration of the first element oscillating within the buffer layer, such that the concentration of the first element varies as an oscillating function of a distance within a thickness of the buffer layer. Spacings among adjacent peaks of the oscillating function change from wide to narrow with respect to a first reference point within the buffer layer. The first and second nitride-based semiconductor layer, S/D electrodes, and a gate electrode are disposed on the buffer layer.
Inventors:
CHOU YI-LUN (CN)
LEE KYE JIN (CN)
CHIU HAN-CHIN (CN)
PAN XIUHUA (CN)
LEE KYE JIN (CN)
CHIU HAN-CHIN (CN)
PAN XIUHUA (CN)
Application Number:
PCT/CN2021/086526
Publication Date:
October 20, 2022
Filing Date:
April 12, 2021
Export Citation:
Assignee:
INNOSCIENCE SUZHOU TECH CO LTD (CN)
International Classes:
H01L29/778; H01L21/02
Domestic Patent References:
| WO2020155096A1 | 2020-08-06 |
Foreign References:
| CN105229207A | 2016-01-06 | |||
| CN103403840A | 2013-11-20 | |||
| JP2011023642A | 2011-02-03 | |||
| JP2015035535A | 2015-02-19 |
Attorney, Agent or Firm:
IDEA INTELLECTUAL (SHENZHEN) IP AGENCY (CN)
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