Title:
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/204227
Kind Code:
A1
Abstract:
Provided is a semiconductor device which is provided with: a semiconductor substrate doped with an impurity; an obverse surface side electrode provided on the obverse surface side of the semiconductor substrate; and a reverse surface side electrode provided on the reverse surface side of the semiconductor substrate. The semiconductor substrate includes: a peak region which is disposed on the reverse surface side of the semiconductor substrate and the impurity concentration of which has at least one peak; a high-concentration region which is disposed further toward the obverse surface side than the peak region, and the impurity concentration of which is more gentle than said at least one peak; and a low-concentration region which is disposed further toward the obverse surface side than the high-concentration region, and the impurity concentration of which is lower than that of the high-concentration region.
Inventors:
TAMURA TAKAHIRO (JP)
ONOZAWA YUICHI (JP)
YOSHIMURA TAKASHI (JP)
TAKISHITA HIROSHI (JP)
YAMANO AKIO (JP)
ONOZAWA YUICHI (JP)
YOSHIMURA TAKASHI (JP)
TAKISHITA HIROSHI (JP)
YAMANO AKIO (JP)
Application Number:
PCT/JP2016/067935
Publication Date:
December 22, 2016
Filing Date:
June 16, 2016
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L29/861; H01L21/263; H01L21/265; H01L21/322; H01L21/329; H01L21/336; H01L29/12; H01L29/739; H01L29/78; H01L29/868
Domestic Patent References:
| WO2013141221A1 | 2013-09-26 | |||
| WO2011125156A1 | 2011-10-13 |
Foreign References:
| JP2006344823A | 2006-12-21 | |||
| JP2012069861A | 2012-04-05 | |||
| JP2013138172A | 2013-07-11 |
Attorney, Agent or Firm:
RYUKA IP LAW FIRM (JP)
Ryuka international patent business corporation (JP)
Ryuka international patent business corporation (JP)
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