Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/150452
Kind Code:
A1
Abstract:
A SiO2 film may become contaminated by carbon (C) when the SiO2 film is to be formed on a semiconductor substrate using TEOS (tetraethylorthosilicate: Si (OC2H5)4). Carbon can function as a fixed charge in the SiO2 film. For example, when carbon (C) contaminates the SiO2 film serving as as a gate insulating film of a metal–oxide–semiconductor field-effect transistor (MOSFET), there is the problem in that the gate threshold voltage (Vth) fluctuates. Provided is a semiconductor device which uses a gallium nitride semiconductor layer, wherein the semiconductor device has at least a portion provided in direct contact with the gallium nitride layer, and is provided with a silicon dioxide film having impurity atoms, the silicon dioxide film containing, as the impurity atoms, carbon at a concentration greater than 0 cm–3 and less than 2E+18 cm–3, and gallium at a concentration of 1E+17 cm–3 or less.
Inventors:
UENO KATSUNORI (JP)
NAKAGAWA KIYOKAZU (JP)
NAKAGAWA KIYOKAZU (JP)
Application Number:
PCT/JP2017/007510
Publication Date:
September 08, 2017
Filing Date:
February 27, 2017
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L29/78; H01L21/316; H01L21/336; H01L29/12
Foreign References:
| JPH09153462A | 1997-06-10 | |||
| JP2016018888A | 2016-02-01 |
Other References:
M. PLACIDI ET AL.: "Deposited Thin Si02 for Gate Oxide on n-Type and p-Type GaN", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 157, no. 11, 16 September 2010 (2010-09-16), pages H1008 - H1013, XP055413907
Attorney, Agent or Firm:
RYUKA IP LAW FIRM (JP)
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