SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2023/156876

A1

The present invention provides a semiconductor device having a transistor of very small size. The semiconductor device comprises: a semiconductor layer; a first electrically conductive layer; a second electrically conductive layer; a third electrically conductive layer; a first insulation layer; and a second insulation layer. The first insulation layer is provided on the first electrically conductive layer. The first insulation layer has a first opening that reaches the first electrically conductive layer. The semiconductor layer is in contact with the top surface and the side surfaces of the first insulation layer, and the top surface of the first electrically conductive layer. The second electrically conductive layer is provided on the semiconductor layer. The second electrically conductive layer has a second opening in a region overlapping the first opening. The second insulation layer is provided on the semiconductor layer and the second electrically conductive layer. The third electrically conductive layer is provided on the second insulation layer. The first insulation layer has a structure obtained by laminating a third insulation layer, and a fourth insulation layer on the third insulation layer. The fourth insulation layer has a region which has a greater film density than the third insulation layer.

HOSAKA YASUHARU
SHIMA YUKINORI
JINTYOU MASAMI
NAKADA MASATAKA
KOEZUKA JUNICHI (JP)
OKAZAKI KENICHI (JP)

PCT/IB2023/051026

August 24, 2023

February 06, 2023

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SEMICONDUCTOR ENERGY LAB (JP)

H01L29/786; H01L21/336; H01L29/417; H05B33/02; H05B33/10; H10K50/00

WO2020089726A1

2020-05-07

JP2016146422A	2016-08-12
JP2014044428A	2014-03-13
JP2016149552A	2016-08-18

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