Title:
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2014/021522
Kind Code:
A1
Abstract:
The aim of the present invention is to provide a semiconductor device containing a graphene p-n vertical homojunction diode by assessing the optical and electrical characteristics of a graphene p-n junction produced according to doping amount. The semiconductor device includes first graphene having a first type of conductivity, and second graphene, which is arranged on the first graphene and is in contact therewith and which has a second type of conductivity different from the first type of conductivity.
Inventors:
CHOI SUK HO (KR)
KIM SUNG (KR)
SHIN DONG HEE (KR)
KIM SUNG (KR)
SHIN DONG HEE (KR)
Application Number:
PCT/KR2012/011708
Publication Date:
February 06, 2014
Filing Date:
December 28, 2012
Export Citation:
Assignee:
UNIV KYUNG HEE UNIV IND COOP GROUP (KR)
International Classes:
H01L29/861
Foreign References:
| US20110278545A1 | 2011-11-17 | |||
| KR20120029332A | 2012-03-26 | |||
| US5930133A | 1999-07-27 | |||
| US20110186805A1 | 2011-08-04 | |||
| US20120187377A1 | 2012-07-26 | |||
| KR20120029339A | 2012-03-26 |
Attorney, Agent or Firm:
KASAN IP & LAW FIRM (KR)
특허법인 가산 (KR)
특허법인 가산 (KR)
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