Title:
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/175437
Kind Code:
A1
Abstract:
The present invention provides a semiconductor device which has a high degree of integration. A semiconductor device according to the present invention comprises first and second transistors and an insulating layer. The first transistor comprises: a source electrode; a drain electrode which is arranged on an insulating layer on the source electrode; a first semiconductor layer which is in contact with the upper surface of the source electrode, the inner wall of an opening that is provided in the insulating layer, and the upper surface of the drain electrode; a first gate insulating layer which is in contact with the upper surface and the lateral surface of the first semiconductor layer; and a first gate electrode which is arranged on the first gate insulating layer and has a region that overlaps with the inner wall of the opening. The second transistor comprises: a second semiconductor layer which is arranged on an insulating layer; a source electrode which is in contact with one of the upper surface and the lateral surface of the second semiconductor layer; a drain electrode which is in contact with the other one of the upper surface and the lateral surface of the second semiconductor layer; a second gate insulating layer which is in contact with the upper surface of the second semiconductor layer, the upper surface and the lateral surface of the source electrode, and the upper surface and the lateral surface of the drain electrode; and a second gate electrode which is arranged on the second gate insulating layer. The first semiconductor layer and the second gate electrode are in contact with each other.
Inventors:
HOSAKA YASUHARU
JINTYOU MASAMI
IGUCHI TAKAHIRO
MISAWA CHIEKO
SATO AMI (JP)
DOBASHI MASAYOSHI
JINTYOU MASAMI
IGUCHI TAKAHIRO
MISAWA CHIEKO
SATO AMI (JP)
DOBASHI MASAYOSHI
Application Number:
PCT/IB2023/052054
Publication Date:
September 21, 2023
Filing Date:
March 06, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; H01L21/8234; H01L27/06; H01L27/088; H05B33/10; H05B45/60; H10K50/00
Foreign References:
| JP2017168764A | 2017-09-21 | |||
| JP2017017208A | 2017-01-19 | |||
| JP2016146422A | 2016-08-12 | |||
| JP2016149552A | 2016-08-18 | |||
| JPH0653440A | 1994-02-25 | |||
| JP2015005738A | 2015-01-08 |
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