Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/175436
Kind Code:
A1
Abstract:
The present invention provides a semiconductor device which comprises a transistor of a very small size. A semiconductor device according to the present invention comprises a transistor, a first insulating layer and a second insulating layer. The transistor comprises: a first semiconductor layer; a first conductive layer; a second conductive layer which has a region that overlaps with the first conductive layer, with the first insulating layer being interposed therebetween; a third conductive layer; and a third insulating layer. The second conductive layer and the first insulating layer have a first opening which reaches the first conductive layer; and the first semiconductor layer is in contact with the upper surface and the lateral surface of the second conductive layer, the lateral surface of the first insulating layer, and the upper surface of the first conductive layer. The third insulating layer is arranged on the first insulating layer, the first semiconductor layer and the second conductive layer. The third conductive layer is arranged on the third insulating layer. The second insulating layer is arranged on the third conductive layer and the third insulating layer.
Inventors:
HOSAKA YASUHARU
SHIMA YUKINORI
JINTYOU MASAMI
NAKADA MASATAKA
KOEZUKA JUNICHI (JP)
OKAZAKI KENICHI (JP)
SHIMA YUKINORI
JINTYOU MASAMI
NAKADA MASATAKA
KOEZUKA JUNICHI (JP)
OKAZAKI KENICHI (JP)
Application Number:
PCT/IB2023/052049
Publication Date:
September 21, 2023
Filing Date:
March 06, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; G02F1/1335; G02F1/1368; G09F9/30; H01L21/336; H01L21/8234; H01L27/06; H01L27/088; H05B33/14; H10K50/00
Domestic Patent References:
| WO2018203181A1 | 2018-11-08 |
Foreign References:
| JP2016149552A | 2016-08-18 | |||
| JP2017168764A | 2017-09-21 | |||
| JP2016111040A | 2016-06-20 | |||
| JP2012256847A | 2012-12-27 |
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