Title:
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/029237
Kind Code:
A1
Abstract:
A semiconductor device according to the present invention comprises: a well region which is formed in a surface part of a first main surface of a semiconductor layer; a source region which is formed in a surface part of the well region; a drain region which is formed in the surface part of the well region at a distance from the source region so as to define a channel region between itself and the source region; a planar gate structure which is formed on the first main surface of the semiconductor layer so as to face the channel region; and a memory structure which is arranged so as to be laterally adjacent to the planar gate structure. The memory structure comprises an insulating film which is formed on the channel region and a charge storage film which faces the channel region with the insulating film being interposed therebetween. This semiconductor device additionally comprises a p-type impurity region that has a higher impurity concentration than the well region.
Inventors:
KOSUGI TAKEO (JP)
SEKIGUCHI YUSHI (JP)
HAYASHI YASUNOBU (JP)
SEKIGUCHI YUSHI (JP)
HAYASHI YASUNOBU (JP)
Application Number:
PCT/JP2023/023948
Publication Date:
February 08, 2024
Filing Date:
June 28, 2023
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H10B43/30; H01L21/336; H01L29/788; H01L29/792; H10B43/40
Foreign References:
| JP2022049589A | 2022-03-29 | |||
| JP2008041832A | 2008-02-21 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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