Title:
SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING POWER CONVERSION DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/100960
Kind Code:
A1
Abstract:
The present invention suppresses a decrease in the OFF breakdown voltage of a semiconductor device. The semiconductor device is provided with: a plurality of first diffusion layers (9, 9A) of a second conductivity type partially formed in an upper layer of a silicon carbide semiconductor layer (1, 2, 3, 7) of a first conductivity type; and a second diffusion layer (11) of the first conductivity type formed in a part of an upper layer of a mark layer, which is one of the plurality of first diffusion layers, and in a part of an upper layer of a body layer, which is one of the plurality of first diffusion layers. The second diffusion layer is formed in an edge part of the mark layer in a plan view, and the second diffusion layer is formed inside the body layer in a plan view.
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Inventors:
YAMAMOTO FUMITOSHI (JP)
TAGUCHI KENSUKE (JP)
TAGUCHI KENSUKE (JP)
Application Number:
PCT/JP2019/044622
Publication Date:
May 22, 2020
Filing Date:
November 14, 2019
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L29/78; H01L21/336; H01L21/68; H01L29/12
Foreign References:
| JP2013055177A | 2013-03-21 | |||
| JP2013247146A | 2013-12-09 | |||
| JP2014192201A | 2014-10-06 | |||
| US20150255341A1 | 2015-09-10 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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