SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE

WIPO Patent Application WO/2019/171684

A1

Provided is a molded type semiconductor device wherein heat dissipation has been improved. This semiconductor device comprises: a circuit member (2) having a front surface and back surface and having a flat section; a terminal part (2a) formed parallel to the flat section and upward of the front surface of the flat section of the circuit member (2); a semiconductor element (4) having an upper surface which is downward of the upper surface of the terminal part (2a) and being formed on the front surface of the flat section of the circuit member (2); a resin layer (6) disposed on the semiconductor element (4) and having a plurality of first opening sections (10) wherethrough the semiconductor element (4) is exposed; conductive layers (7, 8) disposed on the resin layer (6), having upper surfaces upward of the upper surface of the terminal part (2a), and joined with the semiconductor element (4) at the plurality of first opening sections (10); and an encapsulation member (9) having an upper surface parallel to the flat section and integrally encapsulating the circuit member (2), the semiconductor element (4), the resin layer (6), the conductive layers (7, 8), and a portion of the terminal part (2a).

JPS6261350	RESIN-SEALED TYPE SEMICONDUCTOR DEVICE
JPH0766329	SEMICONDUCTOR DEVICE
JP3396363	RESIN COMPOSITION FOR BALL-GRID-ARRAY

ROKUBUICHI HODAKA (JP)
HIRAMATSU SEIKI (JP)
MORISAKI SHOTA (JP)
YANO SHINYA (JP)

PCT/JP2018/044374

September 12, 2019

December 03, 2018

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MITSUBISHI ELECTRIC CORP (JP)

H01L23/29; H01L21/60; H01L25/07; H01L25/18

WO2017104500A1

2017-06-22

JP2015095545A	2015-05-18
US6306680B1	2001-10-23

MURAKAMI, Kanako et al. (JP)

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