Title:
SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/143786
Kind Code:
A1
Abstract:
Disclosed are a semiconductor device and a preparation method therefor. The semiconductor device comprises an active area and a non-active area surrounding the active area. The semiconductor device further comprises: a substrate; a plurality of semiconductor layers located on one side of the substrate; and at least one shielding structure located on one side of the substrate, wherein the shielding structure is electrically connected to a preset potential, and is used for forming an electric field or a zero electric field, which points to the non-active area, of the active area. By means of the technical solution of the embodiments of the present invention, a shielding structure is provided, and the shielding structure is electrically connected to a preset potential, such that an electric field or a zero electric field, which points to a non-active area, of an active area can be formed, thereby effectively blocking silver ions and inhibiting same from migrating to the front center area of a semiconductor chip, so as to obtain a semiconductor device having the stable performance.
Inventors:
PEI YI (CN)
HAN XIAO (CN)
LI YUAN (CN)
XU GUANGZE (CN)
HAN XIAO (CN)
LI YUAN (CN)
XU GUANGZE (CN)
Application Number:
PCT/CN2021/142541
Publication Date:
July 07, 2022
Filing Date:
December 29, 2021
Export Citation:
Assignee:
DYNAX SEMICONDUCTOR INC (CN)
International Classes:
H01L29/778; H01L21/335; H01L23/00; H01L29/06; H01L21/301; H01L23/488
Foreign References:
| CN111627997A | 2020-09-04 | |||
| US20100193894A1 | 2010-08-05 | |||
| CN110556301A | 2019-12-10 | |||
| CN101965649A | 2011-02-02 |
Attorney, Agent or Firm:
ZHONGZI LAW OFFICE (CN)
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