Title:
SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREFOR, POWER CONVERSION CIRCUIT, AND VEHICLE
Document Type and Number:
WIPO Patent Application WO/2024/060259
Kind Code:
A1
Abstract:
The present application discloses a semiconductor device and a preparation method therefor, a power conversion circuit, and a vehicle. The semiconductor device comprises: an N-type semiconductor substrate, an epitaxial layer, a trench structure, a gate, an interlayer dielectric layer, a source, and a drain. The epitaxial layer comprises a first P-type semiconductor region. The bottom of the trench structure is in contact with the first P-type semiconductor region. The trench structure comprises a plurality of first trenches and a second trench, the first trenches extending in a first direction, and the second trench intersecting each of the plurality of first trenches and being in electrical communication with the first trenches. The gate is applied in the trench structure across a gate dielectric layer. The interlayer dielectric layer covers the gate and is provided with a contact hole extending in a second direction. The source is arranged on the interlayer dielectric layer. The source is in contact with a source region through the contact hole and is in electrical communication with the first P-type semiconductor region. The drain is arranged on the side of the semiconductor substrate away from the epitaxial layer. In this way, the total on resistance of the device is reduced.
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Inventors:
HAMADA KIMIMORI (CN)
HU FEI (CN)
HU FEI (CN)
Application Number:
PCT/CN2022/121112
Publication Date:
March 28, 2024
Filing Date:
September 23, 2022
Export Citation:
Assignee:
HUAWEI DIGITAL POWER TECH CO LTD (CN)
International Classes:
H01L33/48; H01L21/336; H01L29/786
Domestic Patent References:
| WO2022111160A1 | 2022-06-02 |
Foreign References:
| US20100044792A1 | 2010-02-25 | |||
| US20180182886A1 | 2018-06-28 | |||
| US20130001592A1 | 2013-01-03 |
Attorney, Agent or Firm:
TDIP & PARTNERS (CN)
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