Title:
SEMICONDUCTOR DEVICE PRODUCTION METHOD, SUBSTRATE PROCESSING DEVICE, AND PROGRAM
Document Type and Number:
WIPO Patent Application WO/2020/189373
Kind Code:
A1
Abstract:
The present invention is for forming a low-resistance film. The present invention comprises: a step in which a substrate is accommodated in a processing chamber; a first film forming step in which a first processing gas containing a first element is supplied to the substrate, and a first film containing the first element is formed on the substrate; and a second film forming step in which a second processing gas containing a second element is supplied to the film containing the first element, and the first element is removed from the film containing the first element to modify the same into a second film containing the second element.
Inventors:
OGAWA ARITO (JP)
SEINO ATSURO (JP)
SEINO ATSURO (JP)
Application Number:
PCT/JP2020/010022
Publication Date:
September 24, 2020
Filing Date:
March 09, 2020
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H01L21/285; C23C16/455
Foreign References:
| JPH0461324A | 1992-02-27 | |||
| JPS59189624A | 1984-10-27 | |||
| JPH0645275A | 1994-02-18 | |||
| JPH11340463A | 1999-12-10 | |||
| JPH05308058A | 1993-11-19 |
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