SEMICONDUCTOR DEVICE - NTT ELECTRONICS CORP

Title:

SEMICONDUCTOR DEVICE

Document Type and Number:

WIPO Patent Application WO/2012/102196

Kind Code:

A1

Abstract:

The purpose of the present invention is to provide a semiconductor device that can suppress device size shrinkage, reduction in series resistance, and leak current. The present invention ventures to insert into the device structure a layer that generates a difference in electric potential that was unnecessary conventionally for device operation. Even when a semiconductor with a small band gap is exposed on a mesa side surface, this difference in electric potential provides a function that can suppress the amount of drop in electric potential in that part and reduce leak current that is inconvenient for device operation. As a result, obtaining these effects is common to heterostructure bipolar transistors, photodiodes, electroabsorption optical modulators, and other devices. Furthermore, in photodiodes, leak current is relaxed; therefore the device size can be reduced. Not only is operating speed improved by reducing series resistance, but also the advantage of being able to dispose devices in a high density array form arises.

Inventors:

ISHIBASHI TADAO (JP)
ANDO SEIGO (JP)
MURAMOTO YOSHIFUMI (JP)
YOSHIMATSU TOSHIHIDE (JP)
YOKOYAMA HARUKI (JP)

Application Number:

PCT/JP2012/051178

Publication Date:

August 02, 2012

Filing Date:

January 20, 2012

Export Citation:

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Assignee:

NTT ELECTRONICS CORP (JP)
NIPPON TELEGRAPH & TELEPHONE (JP)
ISHIBASHI TADAO (JP)
ANDO SEIGO (JP)
MURAMOTO YOSHIFUMI (JP)
YOSHIMATSU TOSHIHIDE (JP)
YOKOYAMA HARUKI (JP)

International Classes:

H01L21/331; G02F1/017; H01L29/737; H01L31/10

Foreign References:

JPS60242671A	1985-12-02
JPH05243252A	1993-09-21
JPH07254612A	1995-10-03

Other References: