Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2014/192348
Kind Code:
A1
Abstract:
In this semiconductor device, the primary surface of a normally-off type field effect transistor (102) in which a source electrode (120) is formed and a first primary surface of a die pad (105) are in contact, and the die pad (105) also serves as the source terminal of the semiconductor device (100). By this means, a semiconductor device is provided which can decrease inductance, the most important factor in operation of a cascode connection circuit, and can improve circuit operating performance.
Inventors:
SATOH TOMOTOSHI
OGINO EIJI
IKETANI NAOYASU
MORISHITA SATOSHI
OGINO EIJI
IKETANI NAOYASU
MORISHITA SATOSHI
Application Number:
PCT/JP2014/055079
Publication Date:
December 04, 2014
Filing Date:
February 28, 2014
Export Citation:
Assignee:
SHARP KK (JP)
International Classes:
H01L25/07; H01L25/18; H03K17/00; H03K17/687
Domestic Patent References:
| WO2013077081A1 | 2013-05-30 |
Foreign References:
| US20120228696A1 | 2012-09-13 | |||
| US20100090668A1 | 2010-04-15 |
Attorney, Agent or Firm:
HARAKENZO WORLD PATENT & TRADEMARK (JP)
Patent business corporation HARAKENZO WORLD PATENT & TRADEMARK (JP)
Patent business corporation HARAKENZO WORLD PATENT & TRADEMARK (JP)
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