Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/043247
Kind Code:
A1
Abstract:
In a termination structure part, a p-type electric-field-attenuating region (20) is provided between first and second JTE regions (4, 5) so as to be in contact with the regions. The first and second JTE regions (4, 5) are provided in a concentric configuration enclosing the outer circumference of an active region starting from the inside. The impurity concentration of the second JTE region (5) is less than the impurity concentration of the first JTE region (4). For the electric-field-attenuating region (20), a first small region (21) and a second small region (22) are repeatedly disposed in alternating fashion in a direction (Y) tangent to the outer circumference of the active region. The average impurity concentration of the electric-field-attenuating region (20) is greater than the impurity concentration of the first JTE region (4) and less than the impurity concentration of the second JTE region (5). The impurity concentration of the first small region (21) is the same as the impurity concentration of the first JTE region (4). The impurity concentration of the second small region (22) is the same as the impurity concentration of the second JTE region (5). The first small region (21) and the second small region (22) are charge balanced. The above configuration makes it possible to improve the pressure resistance of the termination structure part.
Inventors:
KITAMURA SHOJI (JP)
Application Number:
PCT/JP2015/076370
Publication Date:
March 24, 2016
Filing Date:
September 16, 2015
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L29/872; H01L29/06; H01L29/47
Domestic Patent References:
| WO2014208201A1 | 2014-12-31 |
Foreign References:
| JP2008034646A | 2008-02-14 | |||
| JP2011187767A | 2011-09-22 | |||
| JP2009105110A | 2009-05-14 |
Attorney, Agent or Firm:
SAKAI, AKINORI (JP)
Akinori Sakai (JP)
Akinori Sakai (JP)
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