Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/170836
Kind Code:
A1
Abstract:
Provided is a semiconductor device provided with a semiconductor substrate, an electrode which contains aluminum and is provided on the surface side of the semiconductor substrate, and a barrier layer interposed between the semiconductor substrate and the electrode, wherein the barrier layer has, sequentially from the side closer to the semiconductor substrate, a first titanium nitride layer, a first titanium layer, a second titanium nitride layer, and a second titanium layer.
Inventors:
HOSHI YASUYUKI (JP)
Application Number:
PCT/JP2016/055112
Publication Date:
October 27, 2016
Filing Date:
February 22, 2016
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L21/336; H01L21/28; H01L27/04; H01L29/06; H01L29/12; H01L29/78; H01L29/861; H01L29/868
Foreign References:
| JP2012129503A | 2012-07-05 | |||
| JP2002280523A | 2002-09-27 | |||
| JP2003197773A | 2003-07-11 | |||
| JP2004525510A | 2004-08-19 | |||
| JP2009194127A | 2009-08-27 | |||
| JP2012186318A | 2012-09-27 |
Attorney, Agent or Firm:
RYUKA IP LAW FIRM (JP)
Ryuka international patent business corporation (JP)
Ryuka international patent business corporation (JP)
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