Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/020549
Kind Code:
A1
Abstract:
A semiconductor device (1) is provided with: a base substrate; a semiconductor layer formed on the base substrate; electrode patterns (10, 21-24), in which drain electrodes and source electrodes are alternately arrayed in the predetermined array direction (X) on the semiconductor layer; and a group of gate fingers (31-38) each having a shape extending in the extending direction (Y) that is different from the array direction (X). Each of the gate fingers (31-38) is disposed in a region between the drain electrodes and the source electrodes. Furthermore, the gate fingers (31-38) are disposed at positions displaced from each other in the extending direction (Y).
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Inventors:
YAMAGUCHI YUTARO (JP)
HANGAI MASATAKE (JP)
YAMANAKA KOJI (JP)
HANGAI MASATAKE (JP)
YAMANAKA KOJI (JP)
Application Number:
PCT/JP2016/071721
Publication Date:
February 01, 2018
Filing Date:
July 25, 2016
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L21/338; H01L29/778; H01L29/812
Domestic Patent References:
| WO2008053748A1 | 2008-05-08 |
Foreign References:
| JP2004349467A | 2004-12-09 | |||
| JP2002270822A | 2002-09-20 |
Other References:
See also references of EP 3474316A4
Attorney, Agent or Firm:
TAZAWA, Hideaki et al. (JP)
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