Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/143368
Kind Code:
A1
Abstract:
A semiconductor device, provided with an elastic first substrate layer, a first electrode layer provided on the first substrate layer, a semiconductor layer provided on the first electrode layer, a second electrode layer provided on the semiconductor layer, and an elastic second substrate layer provided on the second electrode layer. In the thickness direction of the semiconductor device, a neutral surface is located between the center of the first electrode layer and the center of the second electrode layer in the thickness direction, n represents the number of layers provided to the semiconductor device, Ei represents the elastic modulus of the ith layer from one side of the semiconductor device, and ti and tj represent the thickness of the ith layer and the jth layer, respectively, from among the layers provided to the semiconductor device.
Inventors:
FUKUDA KENJIRO (JP)
SOMEYA TAKAO (JP)
SOMEYA TAKAO (JP)
Application Number:
PCT/JP2018/003475
Publication Date:
August 09, 2018
Filing Date:
February 01, 2018
Export Citation:
Assignee:
RIKEN (JP)
International Classes:
H01L31/048
Domestic Patent References:
| WO2010071123A1 | 2010-06-24 | |||
| WO2017010329A1 | 2017-01-19 |
Foreign References:
| JP2011069812A | 2011-04-07 | |||
| JPH02113584A | 1990-04-25 | |||
| JP2016111192A | 2016-06-20 | |||
| JP2005251671A | 2005-09-15 | |||
| US20140367644A1 | 2014-12-18 |
Other References:
REUVENY, AMIR ET AL.: "Ultra-flexible short-channel organic field-effect transistors", APPLIED PHYSICS EXPRESS, vol. 8, 28 August 2015 (2015-08-28), pages 091601-1 - 091601-4, XP055530767
Attorney, Agent or Firm:
RYUKA IP LAW FIRM (JP)
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