Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/142706
Kind Code:
A1
Abstract:
The present invention provides a semiconductor device provided with a semiconductor substrate in which a drift region, an emitter region, a base region, an accumulation region, and a trench part are provided, wherein the doping concentration distribution in the accumulation region in the depth direction of the semiconductor substrate has: a maximal section in which a doping concentration is maximum; an upper slope section in which the doping concentration decreases with a slope in at least a portion extending toward the base region from the maximal section; and a lower slope section in which the doping concentration decreases with a slope in at least a portion extending toward the drift region from the maximal section. With regard to the range-full width at half maximum characteristics according to the type of the semiconductor substrate and the types of impurities included in the accumulation range, when the full width at half maximum determined by setting the depth position of the maximal section as the range at the time impurities are injected is set as a standard full width at half maximum, the full width at half maximum of the doping concentration in the accumulation region is at least 2.2 times the standard full width at half maximum.
Inventors:
NAITO TATSUYA (JP)
Application Number:
PCT/JP2019/000344
Publication Date:
July 25, 2019
Filing Date:
January 09, 2019
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L29/78; H01L29/12; H01L29/739; H01L29/861; H01L29/868
Foreign References:
| JP2008205015A | 2008-09-04 | |||
| JPH09139510A | 1997-05-27 |
Attorney, Agent or Firm:
RYUKA IP LAW FIRM (JP)
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