Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/064503
Kind Code:
A1
Abstract:
Provided is a semiconductor device which has good electrical properties. The present invention has: a first oxide; a first electrical conductor and a second electrical conductor on the first oxide; a first insulator on the first electrical conductor; a second insulator on the second electrical conductor; a second oxide that is provided on the first oxide and that is in contact with a side surface of the first electrical conductor and a side surface of the second electrical conductor; a third oxide that is provided on the second oxide and that has regions in contact with a side surface of the first insulator and a side surface of the second insulator; a third insulator on the third oxide; and a third electrical conductor on the third insulator.

Inventors:
YAMAZAKI, Shunpei (398, Has, Atsugi-shi Kanagawa 36, JP)
OKUNO, Naoki (398, Has, Atsugi-shi Kanagawa 36, JP)
JINBO, Yasuhiro (398, Has, Atsugi-shi Kanagawa 36, JP)
HODO, Ryota (398, Has, Atsugi-shi Kanagawa 36, JP)
Application Number:
IB2020/058699
Publication Date:
April 08, 2021
Filing Date:
September 18, 2020
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (Atsugi-shi, Kanagawa 36, JP)
International Classes:
H01L29/786; H01L21/28; H01L21/336; H01L21/428; H01L21/477; H01L21/768; H01L21/822; H01L21/8234; H01L21/8242; H01L27/04; H01L27/088; H01L27/108; H01L27/1156; H01L29/417; H01L29/423; H01L29/49; H01L29/788; H01L29/792
Download PDF: