Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/064503
Kind Code:
A1
Abstract:
Provided is a semiconductor device which has good electrical properties. The present invention has: a first oxide; a first electrical conductor and a second electrical conductor on the first oxide; a first insulator on the first electrical conductor; a second insulator on the second electrical conductor; a second oxide that is provided on the first oxide and that is in contact with a side surface of the first electrical conductor and a side surface of the second electrical conductor; a third oxide that is provided on the second oxide and that has regions in contact with a side surface of the first insulator and a side surface of the second insulator; a third insulator on the third oxide; and a third electrical conductor on the third insulator.
Inventors:
YAMAZAKI SHUNPEI (JP)
OKUNO NAOKI (JP)
JINBO YASUHIRO (JP)
HODO RYOTA (JP)
OKUNO NAOKI (JP)
JINBO YASUHIRO (JP)
HODO RYOTA (JP)
Application Number:
PCT/IB2020/058699
Publication Date:
April 08, 2021
Filing Date:
September 18, 2020
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; H01L21/28; H01L21/336; H01L21/428; H01L21/477; H01L21/768; H01L21/822; H01L21/8234; H01L21/8242; H01L27/04; H01L27/088; H01L27/108; H01L27/1156; H01L29/417; H01L29/423; H01L29/49; H01L29/788; H01L29/792
Domestic Patent References:
| WO2019025911A1 | 2019-02-07 |
Foreign References:
| JP2016167595A | 2016-09-15 | |||
| JP2011181906A | 2011-09-15 |
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