Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/019000
Kind Code:
A1
Abstract:
In the present invention, a semiconductor element constituting an upper and lower arm circuit of a power conversion unit has a gate electrode that is a control electrode, and a drain electrode and a source electrode that are main electrodes. The parasitic capacitance Cgd between the gate electrode and the drain electrode has characteristics that change according to the voltage Vds between the drain electrode and the source electrode. A capacity value C1, which is the value of the parasitic capacitance Cgd when the voltage Vds is 80% of a breakdown voltage BV, is greater than a capacity value C2, which is a discretionary value of the parasitic capacitance Cgd for which the voltage Vds is within a range of 20-40% of the breakdown voltage BV.
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Inventors:
ABE EMIKA (JP)
NAGASE TAKUO (JP)
MIWA RYOTA (JP)
MORINO TOMOO (JP)
NAGASE TAKUO (JP)
MIWA RYOTA (JP)
MORINO TOMOO (JP)
Application Number:
PCT/JP2021/022464
Publication Date:
January 27, 2022
Filing Date:
June 14, 2021
Export Citation:
Assignee:
DENSO CORP (JP)
International Classes:
H01L29/12; H01L29/78
Domestic Patent References:
| WO2016042621A1 | 2016-03-24 |
Foreign References:
| JP2020109808A | 2020-07-16 | |||
| JP2018107168A | 2018-07-05 | |||
| JP2019165217A | 2019-09-26 |
Attorney, Agent or Firm:
YAHAGI Kazuyuki et al. (JP)
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