Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/089974
Kind Code:
A1
Abstract:
This semiconductor device comprises a lateral NDMOS transistor obtained by forming a p-type impurity region at the drain of each of a first electrostatic protection diode M21, a second electrostatic protection diode M22, and a third electrostatic protection diode M23, so as to form a thyristor. For example, the anode of the first electrostatic protection diode M21 is connected to a first signal terminal CANH. The anode of the second electrostatic protection diode M22 is connected to a second signal terminal CANL. The anode of the third electrostatic protection diode M23 is connected to a ground terminal GND. The cathodes of the first electrostatic protection diode M21, the second electrostatic protection diode M22, and the third electrostatic protection diode M23 are collectively connected.
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Inventors:
YUKI TADAO (JP)
TANAKA SATOSHI (JP)
TANAKA SATOSHI (JP)
Application Number:
PCT/JP2022/037107
Publication Date:
May 25, 2023
Filing Date:
October 04, 2022
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L27/06; H01L21/336; H01L21/822; H01L21/8234; H01L27/04; H01L29/78
Domestic Patent References:
| WO2021106939A1 | 2021-06-03 |
Foreign References:
| JP2017054864A | 2017-03-16 |
Attorney, Agent or Firm:
SANO PATENT OFFICE (JP)
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