Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/105920
Kind Code:
A1
Abstract:
The present invention corrects uneven warp of a semiconductor device. A semiconductor device according to the present invention is provided with a semiconductor substrate, a recessed layer and a filling film. A semiconductor element is formed on the semiconductor substate. The recessed layer comprises recesses which are unevenly arranged and have openings that open to a same surface other than the surface on which the semiconductor element is formed. The recesses are filled with the filling film. At least one of the density, width, depth and shape of the recesses in the recessed layer may differ on the basis of at least one of the position of a sub-substrate that is mounted on the semiconductor substrate, the density of wiring lines formed on the semiconductor substrate, and the arrangement density of through electrodes formed in the semiconductor substrate.
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Inventors:
SHIGETOSHI TAKUSHI (JP)
Application Number:
PCT/JP2022/038218
Publication Date:
June 15, 2023
Filing Date:
October 13, 2022
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L25/065; H01L23/12; H01L25/07; H01L25/18
Domestic Patent References:
| WO2011021364A1 | 2011-02-24 |
Foreign References:
| JP2004186651A | 2004-07-02 | |||
| JP2012146734A | 2012-08-02 | |||
| JP2010103384A | 2010-05-06 | |||
| JP2011146486A | 2011-07-28 | |||
| US20140217597A1 | 2014-08-07 |
Attorney, Agent or Firm:
MARUSHIMA, Toshikazu (JP)
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