Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/166378
Kind Code:
A1
Abstract:
Provided is a semiconductor device capable of being miniaturized or highly integrated. This semiconductor device has first and second transistors, and a capacitor. The first transistor is provided in the same layer as the second transistor, and each of the first and second transistors has second to fourth conductors, a metal oxide, and a first insulator. The third conductor is provided on the second conductor, and has an opening overlapping the second conductor. The metal oxide has a region contacting a side surface of the opening and an upper surface of the second conductor. The first insulator is provided in a recess of the metal oxide, and the fourth conductor is provided in a recess of the first insulator and has a region overlapping the metal oxide with the first insulator therebetween. The capacitor has a fifth conductor, a second insulator on the fifth conductor, and a sixth conductor on the second insulator. The fifth conductor is electrically connected to the second conductor of the first transistor and the fourth conductor of the second transistor.
Inventors:
ONUKI TATSUYA (JP)
KUNITAKE HITOSHI (JP)
NAKASHIMA MOTOKI (JP)
YAMAZAKI SHUNPEI (JP)
KUNITAKE HITOSHI (JP)
NAKASHIMA MOTOKI (JP)
YAMAZAKI SHUNPEI (JP)
Application Number:
PCT/IB2023/051550
Publication Date:
September 07, 2023
Filing Date:
February 21, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; H10B10/00; H10B12/00; H10B41/70; H10B99/00
Domestic Patent References:
| WO2018203181A1 | 2018-11-08 |
Foreign References:
| JP2006148097A | 2006-06-08 | |||
| JP2016149552A | 2016-08-18 | |||
| JP2012256847A | 2012-12-27 |
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