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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/166379
Kind Code:
A1
Abstract:
Provided is a novel semiconductor device. In the semiconductor device, a lateral channel transistor and a vertical channel transistor are combined. A p-channel transistor is composed of the lateral channel transistor, and an n-channel transistor is composed of the vertical channel transistor to thereby achieve a CMOS semiconductor device. An opening is provided in an insulating layer in a region overlapping a gate electrode of the lateral channel transistor, and the vertical channel transistor is formed in the opening. An oxide semiconductor is used in a semiconductor layer of the vertical channel transistor.

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Inventors:
HOSAKA YASUHARU
SHIMA YUKINORI
JINTYOU MASAMI
NAKADA MASATAKA
KOEZUKA JUNICHI (JP)
OKAZAKI KENICHI (JP)
Application Number:
PCT/IB2023/051554
Publication Date:
September 07, 2023
Filing Date:
February 21, 2023
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; G09F9/30; H01L21/336; H01L21/8234; H01L21/8238; H01L27/088; H01L27/092; H05B33/02; H10K50/00
Foreign References:
JP2016149552A2016-08-18
JP2016146422A2016-08-12
JP2019040026A2019-03-14
JP2009278078A2009-11-26
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