Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/175827
Kind Code:
A1
Abstract:
The present invention comprises: a step for forming, on a semiconductor substrate (12), a first insulating film (20) having a first opening (20a); a step for forming, on the first insulating film (20), a first resist (24) having a second opening (24a) larger than the first opening (20a) above the first opening (20a); a step for forming a gate electrode (18) in the first opening (20a), in the second opening (24a), above the second opening (24a), and on the first resist (24); and a step for forming, on the gate electrode (18), a second resist (26) that covers at least vertically above the second opening (24a) and that has a wider width than the second opening (24a); and a step for etching the gate electrode (18) and the first resist (24) partway by using the second resist (26) as a mask.
Inventors:
OGAWA NOBUYUKI (JP)
Application Number:
PCT/JP2022/012234
Publication Date:
September 21, 2023
Filing Date:
March 17, 2022
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01S5/026; H01S5/223
Foreign References:
| JP2010287604A | 2010-12-24 | |||
| JP2019201169A | 2019-11-21 | |||
| JP2019134140A | 2019-08-08 | |||
| JPH11186661A | 1999-07-09 | |||
| JP2019054107A | 2019-04-04 | |||
| US20140233595A1 | 2014-08-21 |
Attorney, Agent or Firm:
MURAKAMI, Kanako et al. (JP)
Download PDF:
Previous Patent: SUBSTRATE TREATMENT DEVICE, GAS NOZZLE, SEMICONDUCTOR DEVICE PRODUCTION METHOD, SUBSTRATE TREATMENT ...
Next Patent: PACKAGING DEVICE
Next Patent: PACKAGING DEVICE