Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/189059
Kind Code:
A1
Abstract:
This semiconductor device includes: a chip having a first main surface on one side and a second main surface on another side; an IGBT region provided to an inner portion of the first main surface; an outer peripheral region provided to a peripheral edge portion of the first main surface; a well region of a first conductivity-type formed in a surface layer portion of the first main surface in the outer peripheral region so as to demarcate the IGBT region; an insulating film covering the well region; a well connection electrode embedded in the insulating film so as to connect to the well region; and a cathode region of a second conductivity-type which is formed in a surface layer portion of the second main surface in the outer peripheral region so as to oppose the well connection electrode, and that constitutes a diode together with the well region.
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Inventors:
NOCHIDA ATSUSHI (JP)
Application Number:
PCT/JP2023/006638
Publication Date:
October 05, 2023
Filing Date:
February 24, 2023
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L29/739; H01L29/06; H01L29/12; H01L29/78; H01L29/861; H01L29/868
Domestic Patent References:
| WO2020202430A1 | 2020-10-08 |
Foreign References:
| JP2018120990A | 2018-08-02 | |||
| JP2019186504A | 2019-10-24 |
Attorney, Agent or Firm:
AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS (JP)
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