Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/203894
Kind Code:
A1
Abstract:
A semiconductor device according to the present invention is provided with a gate trench that is formed in a semiconductor layer, and a gate electrode that is embedded in the gate trench, with an insulating layer interposed therebetween. The gate trench includes a first outer peripheral gate trench section that is provided in an outer peripheral region thereof, and a second outer peripheral gate trench section that is provided outward of the first outer peripheral gate trench section. The semiconductor device is provided with, in the semiconductor layer, a first floating trench that is formed in a region between the first outer peripheral gate trench section and the second outer peripheral gate trench section, and a first floating electrode that is embedded in the first floating trench, with an insulating layer interposed therebetween, and that is in an electrically floating state.
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Inventors:
YUTANI MASATSUGU (JP)
Application Number:
PCT/JP2023/008033
Publication Date:
October 26, 2023
Filing Date:
March 03, 2023
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L29/78; H01L29/06; H01L29/12
Foreign References:
| US20210104624A1 | 2021-04-08 | |||
| US20120261737A1 | 2012-10-18 | |||
| JP2010010556A | 2010-01-14 | |||
| JP2019117867A | 2019-07-18 | |||
| JP2020061412A | 2020-04-16 |
Attorney, Agent or Firm:
ONDA Makoto et al. (JP)
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