Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/219013
Kind Code:
A1
Abstract:
This semiconductor device comprises: an n-type semiconductor layer; an n-type first body region formed in a surface of the semiconductor layer; a p-type source region that is formed in the first body region, and that is formed separated from the outer edge of the first body region towards the inside thereof; a p-type drain region that is formed in the surface of the semiconductor layer, and that is formed separated from the first body region in the X-axis direction; a field insulation film that is formed over a section of the surface of the semiconductor layer, between the source region and the drain region in the X-axis direction; a gate insulation film formed over a section of the surface of the semiconductor layer, between the field insulation film and the drain region in the X-axis direction; a gate electrode formed on the gate insulation film; and a temperature sensor formed on the field insulation film.
Inventors:
SHIMIZU YUSUKE (JP)
Application Number:
PCT/JP2023/016848
Publication Date:
November 16, 2023
Filing Date:
April 28, 2023
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L27/06; H01L21/336; H01L21/822; H01L21/8234; H01L21/8238; H01L27/04; H01L27/092; H01L29/78; H01L29/861; H01L29/868
Domestic Patent References:
| WO2021038938A1 | 2021-03-04 |
Foreign References:
| JP2019186510A | 2019-10-24 | |||
| US20190172770A1 | 2019-06-06 | |||
| JP2017037997A | 2017-02-16 | |||
| US6046470A | 2000-04-04 |
Attorney, Agent or Firm:
ONDA Makoto et al. (JP)
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