SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2024/047488

A1

Provided is a semiconductor device that occupies a small area. The semiconductor device includes a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a first conductive layer, a second conductive layer, and a first insulation layer. The first insulation layer is provided on the first conductive layer. The second conductive layer is provided on the first insulation layer. The first insulation layer and the second conductive layer include an opening that reaches the first conductive layer. The first semiconductor layer contacts an upper surface of the first conductive layer, a side surface of the first insulation layer, and an upper surface and a side surface of the second conductive layer. The second semiconductor layer is provided on the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer. The first semiconductor layer includes a first material. The second semiconductor layer includes a second material. The third semiconductor layer includes a third material. A band gap of the first material is greater than a band gap of the second material. A band gap of the third material is greater than the band gap of the second material.

KOEZUKA JUNICHI (JP)
JINTYOU MASAMI
SHIMA YUKINORI

PCT/IB2023/058423

March 07, 2024

August 25, 2023

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SEMICONDUCTOR ENERGY LAB (JP)

H01L29/786; H01L21/8234; H01L27/088; H05B33/02; H10K50/10

JP2017168764A	2017-09-21
JP2015156477A	2015-08-27
JP2012174836A	2012-09-10
JP2017092299A	2017-05-25

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