Title:
STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/047487
Kind Code:
A1
Abstract:
Provided is a storage device which can be micro-fabricated or highly integrated. The storage device includes a memory cell, a first insulator, and a second insulator. The memory cell includes a capacitor element and a transistor on the capacitor element. The capacitor element includes a second conductor, a third insulator on the second conductor, and a third conductor on the third insulator. A portion of the second conductor, a portion of the third insulator, and a portion of the third conductor are disposed in an opening part provided to the first insulator. The transistor includes the third conductor, a fourth conductor on the second insulator, an oxide semiconductor, a fourth insulator on the oxide semiconductor, and a fifth conductor on the fourth insulator. A portion of the oxide semiconductor is disposed in an opening part provided to the second insulator and the fourth conductor. The oxide semiconductor has a region in contact with the upper surface of the third conductor, a region in contact with a side surface of the fourth conductor, and a region in contact with a portion of the upper surface of the fourth conductor. The oxide semiconductor has a lamination structure.
Inventors:
YAMAZAKI SHUNPEI (JP)
KUNITAKE HITOSHI (JP)
MATSUZAKI TAKANORI (JP)
KUNITAKE HITOSHI (JP)
MATSUZAKI TAKANORI (JP)
Application Number:
PCT/IB2023/058422
Publication Date:
March 07, 2024
Filing Date:
August 25, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H10B12/00; H01L21/336; H01L21/822; H01L21/8234; H01L25/065; H01L25/07; H01L25/18; H01L27/04; H01L27/06; H01L27/088; H01L29/786; H01L29/788; H01L29/792; H10B41/70
Foreign References:
| JP2021114563A | 2021-08-05 | |||
| JP2016149552A | 2016-08-18 | |||
| JP2020120116A | 2020-08-06 |
Download PDF: