SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2020/183937

A1

Provided is a semiconductor device which can further improve the performance of a semiconductor element having a gate electrode surrounding three surfaces of a plate-shaped channel region. The present invention comprises: a semiconductor layer; a channel region that is provided on the semiconductor layer; first and second main electrode regions that are provided to face both end sides of the channel region in a channel length direction; gate insulation films that are provided on inner walls of first and second trenches provided on both mutually facing sides of the channel region and on the upper surface of the channel region; and a gate electrode that has a first convex part embedded in the first trench with the gate insulation film therebetween, a second convex part embedded in the second trench with the gate insulation film therebetween, and a horizontal part connected to the upper ends of the first and second convex parts and provided on the upper surface of the channel region with the gate insulation film therebetween, wherein the depths of the first and second main electrode regions are equal to or larger than the depths of the first and second convex parts.

KIMIZUKA NAOHIKO (JP)
KATAOKA TOYOTAKA (JP)
KUDOH YOSHIHARU (JP)

PCT/JP2020/002508

September 17, 2020

January 24, 2020

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SONY SEMICONDUCTOR SOLUTIONS CORP (JP)

H01L29/78; H01L21/336; H01L21/8234; H01L27/06; H01L27/088; H01L27/146

JP2002151688A	2002-05-24
JPH1168069A	1999-03-09
JP2006121093A	2006-05-11

See also references of EP 3940791A4

TANAKA Hidetetsu et al. (JP)

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