Title:
SEMICONDUCTOR ELEMENT, ELECTRICAL DEVICE, BIDIRECTIONAL FIELD EFFECT TRANSISTOR, AND MOUNTING STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2016/125354
Kind Code:
A1
Abstract:
The purpose is to provide a semiconductor element in which a sufficient concentration of a two-dimensional hole gas can be present even without providing a p-type GaN layer on the outermost surface of a polarization superjunction region. The semiconductor element has a polarization superjuntion region comprising an undoped GaN layer 11 having a thickness a [nm] (where a is 10-1000 nm), an AlxGa1-xN layer 12, and an undoped GaN layer 13, the layers being sequentially layered. The Al composition x and the thickness t [nm] of the Alx Ga1-x N layer 12 satisfy the following relationship. [Mathematical 1] t≥α(a)xβ(a), where α is represented by Log (α) = p0 + p1log (a)+p2{log (a)}2 (p0 = 7.3295, p1 =-3.5599, p2 = 0.6912), and β is represented by β = p'0 + p'1log(a) + p'2{log (a)}2 (p'0 = -3.6509, p'1 = 1.9445, p'2 = -0.3793).
More Like This:
| JPH021138 | SEMICONDUCTOR DEVICE |
| JPH04181742 | FIELD-EFFECT TRANSISTOR AND ITS MANUFACTURE |
| JPH0737903 | FIELD-EFFECT TRANSISTOR AND FORMATION THEREFOR |
Inventors:
MATSUMOTO SOUTA (JP)
ECHIGOYA SHOKO (JP)
YAGI SHUICHI (JP)
NAKAMURA FUMIHIKO (JP)
KAWAI HIROJI (JP)
ECHIGOYA SHOKO (JP)
YAGI SHUICHI (JP)
NAKAMURA FUMIHIKO (JP)
KAWAI HIROJI (JP)
Application Number:
PCT/JP2015/081102
Publication Date:
August 11, 2016
Filing Date:
November 05, 2015
Export Citation:
Assignee:
POWDEC KK (JP)
International Classes:
H01L21/338; H01L21/337; H01L27/098; H01L29/06; H01L29/778; H01L29/808; H01L29/812; H01L29/872
Foreign References:
| JP2014078565A | 2014-05-01 | |||
| JP2011181934A | 2011-09-15 | |||
| JP2011082331A | 2011-04-21 |
Other References:
NAKAJIMA, AKIRA ET AL.: "GaN-based Bidirectional Super HFETs Using Polarization Junction Concept on Insulator Substrate", PROCEEDINGS OF THE 2012 24TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, 2012, pages 265 - 268, ISBN: 978-1-4577-1595-2
Attorney, Agent or Firm:
MORI, Koh-ichi (JP)
Woods Koichi (JP)
Woods Koichi (JP)
Download PDF:
Previous Patent: HEAT EXCHANGER AND METHOD FOR CONTROLLING HEAT EXCHANGER
Next Patent: ELECTROCONDUCTIVE MICROPARTICLES
Next Patent: ELECTROCONDUCTIVE MICROPARTICLES