Title:
SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2023/175830
Kind Code:
A1
Abstract:
A semiconductor element (550) according to the present disclosure is characterized by comprising: an InP semiconductor substrate (101) of a first conductivity type; a multilayer semiconductor layer which is composed of a first semiconductor layer (102) of the first conductivity type, an undoped active layer (103) and a semiconductor layer (104) of a second conductivity type, the layers being sequentially formed on the semiconductor substrate (101) of the first conductivity type; a second semiconductor layer (109) of the first conductivity type, the second semiconductor layer (109) being formed on the multilayer semiconductor layer; and an insulating film (110) which is formed to be in contact with the second semiconductor layer (109) of the first conductivity type. This semiconductor element (550) is also characterized in that the bottom of the insulating film (110) is provided with an opening (110a) from which the second semiconductor layer (109) of the first conductivity type is exposed.
More Like This:
Inventors:
KAWAHARA HIROYUKI (JP)
Application Number:
PCT/JP2022/012244
Publication Date:
September 21, 2023
Filing Date:
March 17, 2022
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01S5/02
Domestic Patent References:
| WO2019241159A1 | 2019-12-19 |
Foreign References:
| US20190074404A1 | 2019-03-07 | |||
| JP2020501345A | 2020-01-16 |
Attorney, Agent or Firm:
PALMO PATENT FIRM, P.C. (JP)
Download PDF: