Title:
SEMICONDUCTOR EPITAXIAL STRUCTURE, APPLICATION THEREOF AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/052498
Kind Code:
A1
Abstract:
The present invention provides a semiconductor epitaxial structure, an application thereof and a preparation method therefor. The semiconductor epitaxial structure comprises a substrate, an aluminum nitride layer formed on the substrate, and a gallium nitride layer formed on the aluminum nitride layer. The semiconductor epitaxial structure can be applied in a semiconductor device and an electronic device.
Inventors:
CHEN WEIJUN (CN)
LIU MEIHUA (CN)
LIU MEIHUA (CN)
Application Number:
PCT/CN2020/116501
Publication Date:
March 25, 2021
Filing Date:
September 21, 2020
Export Citation:
Assignee:
SHENZHEN JING XIANG TECH CO LTD (CN)
International Classes:
H01L29/205; C23C14/35; H01L33/00
Domestic Patent References:
| WO2007005984A1 | 2007-01-11 |
Foreign References:
| CN103258844A | 2013-08-21 | |||
| CN103199164A | 2013-07-10 | |||
| CN102714162A | 2012-10-03 | |||
| CN101079463A | 2007-11-28 | |||
| CN108110098A | 2018-06-01 |
Attorney, Agent or Firm:
SHENZHEN JINGZHI INTELLECTUAL PROPERTY AGENCY CO. LTD (CN)
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