Title:
SEMICONDUCTOR FILM AND SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2014/014057
Kind Code:
A1
Abstract:
A semiconductor film is manufactured by applying a semiconductor-film-forming application liquid containing inorganic semiconductor particles and a compound having a relative permittivity of at least 2, or a compound having reducing performance relative to the inorganic semiconductor particles. In a solar cell (400) there is provided on a substrate (410): an anode layer (420); a layer (430) comprising this p-type semiconductor film; a bonded interface layer (440) containing a compound having relative permittivity of at least 2; a layer (450) comprising this n-type semiconductor film; and a cathode layer (460). It is possible to provide an inexpensive solar cell having a bonded interface layer, the solar cell exhibiting exceptional electricity-generating efficiency.
Inventors:
WATANABE AKIRA (JP)
YUMOTO TORU (JP)
YUMOTO TORU (JP)
Application Number:
PCT/JP2013/069527
Publication Date:
January 23, 2014
Filing Date:
July 18, 2013
Export Citation:
Assignee:
ASAHI CHEMICAL IND (JP)
UNIV TOHOKU (JP)
UNIV TOHOKU (JP)
International Classes:
H01L21/208; H01L31/04
Domestic Patent References:
| WO2011118716A1 | 2011-09-29 |
Foreign References:
| JP2002100759A | 2002-04-05 | |||
| JP2009505930A | 2009-02-12 | |||
| JP2009246213A | 2009-10-22 | |||
| JP2011159920A | 2011-08-18 | |||
| JP2009096925A | 2009-05-07 | |||
| JPS428013B1 | ||||
| JPS428014B1 | ||||
| JPS5152381A | 1976-05-08 | |||
| JPS51130408A | 1976-11-12 |
Other References:
See also references of EP 2876668A4
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
Yoshiki Hasegawa (JP)
Yoshiki Hasegawa (JP)
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