Title:
SEMICONDUCTOR FILM, PHOTODETECTION ELEMENT, IMAGE SENSOR, AND METHOD FOR PRODUCING SEMICONDUCTOR FILM
Document Type and Number:
WIPO Patent Application WO/2021/161940
Kind Code:
A1
Abstract:
Provided is a semiconductor film comprising: an aggregate of semiconductor quantum dots containing Pb atoms; and a ligand that forms a coordination bond with semiconductor quantum dots. The semiconductor film has a ratio of the number of monovalent or lower Pb atoms to the number of bivalent Pb atoms of 0.20 or less. Provided are a photodetection element and an image sensor that include the semiconductor film. Provided is a method for producing a semiconductor film.
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Inventors:
ONO MASASHI (JP)
TAKATA MASAHIRO (JP)
TAKATA MASAHIRO (JP)
Application Number:
PCT/JP2021/004477
Publication Date:
August 19, 2021
Filing Date:
February 08, 2021
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
B82Y20/00; H01L21/368; H01L27/146; H01L31/0248
Domestic Patent References:
| WO2019150989A1 | 2019-08-08 |
Foreign References:
| KR101057830B1 | 2011-08-19 | |||
| JP2018534760A | 2018-11-22 | |||
| US20180145204A1 | 2018-05-24 |
Other References:
PRADHAN SANTANU, STAVRINADIS ALEXANDROS, GUPTA SHUCHI, BI YU, DI STASIO FRANCESCO, KONSTANTATOS GERASIMOS: "Trap-State Suppression and Improved Charge Transport in PbS Quantum Dot Solar Cells with Synergistic Mixed-Ligand Treatments", SMALL, vol. 13, no. 21, 2017, pages 1 - 9, XP055782946, ISSN: 1613-6810, DOI: 10.1002/smll.201700598
Attorney, Agent or Firm:
SIKs & Co. (JP)
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